directed energy, inc. an ixys company DE475-102N21A rf power mosfet preliminary data sheet v dss = 1000 v i d25 = 21 a r ds(on) = 0.52 ? ? ? ? p dhs = 600w symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 21 a i dm t c = 25c, pulse width limited by t jm 126 a i ar t c = 25c 21 a e ar t c = 25c 30 mj i s i dm , di/dt ? 100a/ s, v dd v dss , t j 150c, r g = 0.2 ? 5 v/ns i s = 0 >200 v/ns p dhs t c = 25c derate 4.4w/c above 25c 600 w p damb t c = 25c 4.5 w t j -55?+150 c t jm 150 c t stg -55?+150 c t l 1.6mm (0.063 in) from case for 10 s 300 c weight 3 g dv/dt symbol test conditions characteristic values t j = 25c unless otherwise specified min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25c v gs = 0 t j = 125c 50 1 a ma r ds(on) 0.52 ? g fs v ds = 15 v, i d = 0.5i d25 , pulse test 22 s v gs = 15 v, i d = 0.5i d25 pulse test, t 300 s, duty cycle d 2% features ? isolated substrate ? high isolation voltage (>2500v) ? excellent thermal transfer ? increased temperature and power cycling capability ? ixys advanced low q g process ? low gate charge and capacitances ? easier to drive ? faster switching ? low r ds(on) ? very low insertion inductance (<2nh) ? no beryllium oxide (beo) or other haz- ardous materials advantages ? optimized for rf and high speed switching at frequencies to 30mhz ? easy to mount?no insulators needed ? high power density ? n-channel enhancement mode ? low q g and r g ? high dv/dt ? nanosecond switching ? 30mhz maximum frequency drain sg1 sg2 gate sd1 sd2
directed energy, inc. an ixys company DE475-102N21A rf power mosfet symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. r g 0.3 ? c iss 5500 pf c oss v gs = 0 v, v ds = 0.8 v dss(max) , f = 1 mhz 640 pf c rss 190 pf t d(on) 5 ns t on v gs = 15 v, v ds = 0.8 v dss i d = 0.5 i dm r g = 0.2 ? (external) 5 ns t d(off) 5 ns t off 8 ns q g(on) 160 nc q gs v gs = 10 v, v ds = 0.5 v dss i d = 0.5 i d25 35 nc q gd 77 nc r thjhs 0.20 k/w source-drain diode characteristic values ( t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 21 a i sm repetitive; pulse width limited by t jm 126 a v sd 1.5 v t rr 200 ns i f = i s , v gs = 0 v, pulse test, t 300 s, duty cycle 2% q rm i f = i s , -di/dt = 100a/ s, v r = 100v 0.6 c i rm 8 a directed energy, inc. reserves the right to change limits, test conditions and dimensions. dei mosfets are covered by one or more of the following u.s. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 for detailed device mounting and installation instructions, see the ? de- series mosfet mounting instructions ? technical note on dei?s web site at www.directedenergy.com/apptech.htm
directed energy, inc. an ixys company DE475-102N21A rf power mosfet directed energy, inc. an ixys company 2401 research blvd., suite 108 fort collins, co usa 80526 970-493-1901 fax: 970-493-1903 email: deiinfo@directedenergy.com web: http://www.directedenergy.com 102n21a de-series spice model (preliminary) the de-series spice model is illustrated in figure 1. the model is an expan- sion of the spice level 3 mosfet model. it includes the stray inductive terms l g , l s and l d . rd is the r ds(on) of the device, rds is the resistive leakage term. the output capacitance, c oss , and reverse transfer capacitance, c rss are mod- eled with reversed biased diodes. this provides a varactor type response neces- sary for a high power device model. the turn on delay and the turn off delay are adjusted via ron and roff. figure 1 de-series spice model this spice model may be downloaded as a text file from the dei web site at www.directedenergy.com/spice.htm net list: .subckt 102n21a 10 20 30 * terminals: d g s * 1000 volt 21 amp 0.52 ohm n-channel power mosfet * rev.a 01-09-02 m1 1 2 3 3 dmos l=1u w=1u ron 5 6 0.3 don 6 2 d1 rof 5 7 .1 dof 2 7 d1 d1crs 2 8 d2 d2crs 1 8 d2 cgs 2 3 5.5n rd 4 1 0.5 dcos 3 1 d3 rds 1 3 5.0meg ls 3 30 .5n ld 10 4 1n lg 20 5 1n .model dmos nmos (level=3 vto=3.0 kp=3.8) .model d1 d (is=.5f cjo=1p bv=100 m=.5 vj=.6 tt=1n) .model d2 d (is=.5f cjo=400p bv=1000 m=.4 vj=.6 tt=400n rs=10m) .model d3 d (is=.5f cjo=900p bv=1000 m=.3 vj=.4 tt=400n rs=10m) .ends doc #9200-0247 rev 1 ? 2002 directed energy, inc.
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